unisonic technologies co., ltd UTT4850 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2014 unisonic technologies co., ltd qw-r209-032.a n-channel power mosfet ? description the utc UTT4850 is an n-channel, it uses utc?s advanced technology to provide the customers with a minimum on state resistance and high switching speed. ? features *r ds(on) < 25m ? @ v gs =10v, i d =6.0a r ds(on) < 31m ? @ v gs =4.5v, i d =5.1a * high switching speed ? symbol g d s sop-8 ? ordering information ordering number package pin assignment packing 123456 7 8 UTT4850g-s08-r sop-8 s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source ? marking
UTT4850 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r209-032.a ? absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous drain current (t j =175c) (note 1) t a =25c i d 6.0 a t a =70c 5.0 a pulsed drain current i dm 24 a avalanche current i as 6 a repetitive avalanche energy e as 120 mj power dissipation (note 1) t a =25c p d 1.7 w t a =70c 1.2 w junction temperature t j -50~+150 c storage temperature range t stg -50~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. l=6.66mh, i as =6a, v dd = 50v, r g =25 ? , starting t j =25c ? thermal characteristics parameter symbol ratings unit junction to ambient (note) ja 75 c/w note: surface mounted on 1? x 1? fr4 board. ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit static parameters drain-source breakdown voltage bv dss i d =250a, v gs =0v 60 v zero gate voltage drain current i dss v ds =60v, v gs =0v 1 a v ds =60v, v gs =0v, t j =55c 20 a gate-source leakage current forward i gss v gs =+20v, v ds =0v +100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 1 2.5 v on state drain current (note 1) i d ( on ) v ds =2v, v gs =10v 40 a static drain-source on-state resistance (note 1) r ds(on) v gs =10v, i d =6.0a 20 25 m ? v gs =4.5v, i d =5.1a 22 31 m ? dynamic parameters (note 2) input capacitance c iss v ds =25v,v gs =0v, f=1.0mhz 2500 2700 pf output capacitance c oss 185 200 pf reverse transfer capacitance c rss 150 170 pf gate resistance r g v gs =0.1v, f=1mhz 0.5 1.4 2.4 ? switching parameters turn-on delay time t d ( on ) v dd =30v, i d 0.5a, v gs =10v, r g =25 ? 70 90 ns rise time t r 80 100 ns turn-off delay time t d ( off ) 750 800 ns fall-time t f 165 200 ns total gate charge q g v gs =10v, v ds =50v, i d =1.3a 70 100 nc gate to source charge q gs 8 nc gate to drain charge q gd 13 nc source- drain diode ratings and characteristics diode forward voltage (note 1) v sd i s =1.7a,v gs =0v 0.8 1.2 v notes: 1. pulse test; pulse width 300s, duty cycle 2%. 2. guaranteed by design, not s ubject to production testing.
UTT4850 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qr-r209-032.a
UTT4850 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qr-r209-032.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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